D1-28Z
| Model | D1-28Z |
| Description | NPN SILICON RF POWER TRANSISTOR |
| PDF file | Total 1 pages (File size: 21K) |
| Chip Manufacturer | ASI |
D1-28Z
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
D1-28Z
is Designed for General
Purpose Class C Amplifier
Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L STUD
A
45°
C
B
FEATURES:
•
P
G
= 8.0 dB Typ. at 1 W/1,000 MHz
•
Emitter Ballasting for Ruggedness
•
Omnigold™
Metallization System
D
E
B
C
E
J
E
F
G
I
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
1.0 A
45 V
7 W @ T
C
= 25 C
-65 to +200
O
C
-65 to +150
O
C
25
O
C/W
O
H
K
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
.640 / 16.26
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10807
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 1 mA
I
C
= 20 mA
I
E
= 1 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
T
C
= 25
O
C
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
45
45
3.5
250
UNITS
V
V
V
µ
A
---
pF
dB
%
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 1.0 W
f = 1,000 MHz
15
150
5.0
7.0
65
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
