D1002UK
| Model | D1002UK |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 4 pages (File size: 44K) |
| Chip Manufacturer | SEME-LAB |
D1002UK
80
70
60
50
P out
80
70
60
50
Drain Efficiency
P out
80
70
60
50
40
%
W
f
1
= 175.0MHz
I
dq
= 0.2A
V
DS
= 28V
17
16
15
14
Gain
40
W
40
f
1
= 175.0MHz
I
dq
= 0.2A
V
DS
= 28V
13
dB
30
20
10
0
0
1
2
3
4
P in W
30
20
10
0
30
20
10
0
0
1
2
3
4
P in W
Pout
Gain
12
11
10
5
6
7
8
9
5
6
7
8
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3
dBc
Figure 2 – Power Output & Gain
vs. Power Input.
D1002UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
f
1
= 175.0MHz
f
2
= 175.1MHz
V
DS
= 28V
-25
-30
-35
-40
-45
-50
0
5
Frequency
MHz
175MHz
Z
S
Ω
3.8 + j6.5
Z
L
Ω
4.6 + j0.4
10 15 20 25 30 35 40 45 50 55 60 65
P out W PEP
Idq = 0.2A
Idq = 1A
Figure 3 – IMD vs. Output Power.
Typical S Parameters
!
Vds=28V
Idq=0.2A
# MHZ S MA R 50
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S11
mag
0.76
0.79
0.84
0.87
0.90
0.92
0.94
0.96
0.97
0.98
0.98
0.98
ang
-144
-155
-163
-169
-176
177
170
163
156
150
144
141
S21
mag
15.6
7.1
4.2
2.7
1.9
1.5
1.1
0.9
0.7
0.6
0.4
0.4
ang
86
61
43
33
23
20
11
6
-2
-8
-12
-14
S12
mag
0.026
0.021
0.012
0.009
0.016
0.025
0.033
0.046
0.051
0.062
0.068
0.078
ang
1
-9
-3
47
76
87
85
82
78
76
74
67
S22
mag
0.58
0.66
0.74
0.81
0.85
0.88
0.91
0.94
0.96
0.98
0.98
0.98
ang
-119
-132
-144
-154
-163
-172
-180
172
165
157
152
148
3/99
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Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
E-mail:
sales@semelab.co.uk
