D1022
| Model | D1022 |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 4 pages (File size: 58K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D1022UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
DRAIN 1
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.65R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
292W
70V
±20V
15A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim.11/00
