D1204UK
| Model | D1204UK |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 2 pages (File size: 19K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
D
(2 pls)
E
B
1
2
3
A
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
5
4
H
I
F
M
K
J
N
DT
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
GATE
SOURCE (COMMON)
• USEFUL P
O
AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
117W
40V
±20V
15A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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