D1209UK
| Model | D1209UK |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 2 pages (File size: 20K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D1209UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
DRAIN 1
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
100W
40V
±20V
10A
–65 to 150°C
200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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