D1213UK
| Model | D1213UK |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 4 pages (File size: 42K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D1213UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
B
E
8
1
7
6
3
4
2
C
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
58W
40V
±20V
20A
–65 to 150°C
200°C
Prelim. 7/99
