D1217
| Model | D1217 |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 2 pages (File size: 22K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D1217UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
C
E
(2 pls)
K
1
2
3
4
F
G
8
J
Typ.
7
6
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 12.5V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
D
M
Q
P
I
N
O
H
DD
PIN 1
PIN 3
PIN 5
PIN 7
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Q
mm
9.14
12.70
45°
6.86
0.76
9.78
19.05
4.19
3.17
1.52R
1.65R
16.51
22.86
0.13
6.35
10.77
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.64
0.13
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.025
0.005
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Inches
0.360
0.500
45°
0.270
0.030
0.385
0.750
0.165
0.125
0.060R
0.065R
0.650
0.900
0.005
0.250
0.424
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
175W
40V
±20V
20A
–65 to 150°C
200°C
Prelim. 9/00
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METAL GATE RF SILICON FET | SEME-LAB | Preview |
