D13003
| Model | D13003 |
| Description | NPN SILICON POWER TRANSISTOR |
| PDF file | Total 3 pages (File size: 80K) |
| Chip Manufacturer | CDIL |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
NPN SILICON POWER TRANSISTOR
CD13003
TO-126
MARKING: CD
13003
Applications.
Suitable for Lighting, Switching Regulator and Motor Control.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
VCBO
600
Collector -Base Voltage
VCEO
400
Collector -Emitter ( sus) Voltage
VEBO
9.0
Emitter -Base Voltage
IC
1.5
Collector Current Continuous
ICM
3.0
Peak (1)
IB
0.75
Base Current Continuous
IBM
1.5
Peak (1)
IE
2.25
Emitter Current Continuous
IEM
4.5
Peak (1)
PD
1.4
Power Dissipation @ Ta=25 deg C
11.2
Derate Above 25 deg C
PD
45
Power Dissipation @ Tc=25 deg C
320
Derate Above 25 deg C
Tj, Tstg
-65 to +150
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth (j-c)
3.12
Junction to Case
Rth (j-a)
89
Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes: 1/8" from Case
TL
275
for 5 Seconds.
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
VCBO
IC=1mA, IE=0
600
-
Collector -Base Voltage
VCEO(sus)* IC=10mA, IB=0
400
-
Collector -Emitter ( sus) Voltage
ICBO
VCB=600V, IE=0
-
-
Collector-Cuttoff Current
VCB=600V, IE=0,TC=100 deg C
-
-
IEBO
VEB=9V, IC=0
-
-
Emitter-Cuttoff Current
hFE*
IC=0.5A,VCE=5V
8.0
-
DC Current Gain
IC=2A,VCE=5V
5.0
-
UNIT
V
V
V
A
A
A
A
A
A
W
mW /deg C
W
mW /deg C
deg C
deg C/W
deg C/W
deg C
MAX
-
-
1.0
5.0
1.0
40
25
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 3
