D2002UK
| Model | D2002UK |
| Description | METAL GATE RF SILICON FET |
| PDF file | Total 2 pages (File size: 19K) |
| Chip Manufacturer | SEME-LAB |
TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
N
(typ)
B
3
D
(2 pls)
2
1
A
F
(2 pls)
H
J
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DP
PIN 1
PIN 3
SOURCE
GATE
PIN 2
DRAIN
DIM
mm
A
16.51
B
6.35
C
45°
D
3.30
E
18.92
F
1.52
G
2.16
H
14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45°
Tol.
0.25
0.13
5°
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45°
Tol.
0.010
0.005
5°
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
0.005
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 12/00
