DB101SF1
| Model | DB101SF1 |
| Description | Bridge Rectifier Diode, |
| PDF file | Total 4 pages (File size: 704K) |
| Chip Manufacturer | YANGJIE |
DB101S THRU DB107S
Bridge Rectifiers
Features
● UL recognition, file #E313149
● Ideal for automated placement
● High surge current capability
● Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °
C
RoHS
COMPLIANT
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
SMPS, lighting ballast, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Mechanical Data
●
Package:
DBS
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen free
●
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
As marked on body
■
Maximum Ratings
(Ta=25℃ Unless otherwise specified
）
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output
On glass-epoxi
current @60Hz sine wave,
substrate
R-load, Ta=40℃
Surge(non-repetitive)forward current
@60Hz half sine wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃, Rating of per diode
Storage temperature
Junction temperature
V
RRM
IO
IFSM
It
Tstg
Tj
2
SYMBOL
UNIT
DB101S
DB101S
DB102S
DB102S
100
DB103S
DB103S
200
DB104S
DB104S
400
DB105S
DB105S
600
DB106S
DB106S
800
DB107S
DB107S
1000
V
50
A
A
A
2
s
℃
℃
1.0
30
3.7
-55 ~+150
-55 ~+150
■Electrical
Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
SYMBOL UNIT
VF
IRRM
V
TEST
CONDITIONS
IFM=0.5A
DB101S
DB102S
DB103S
DB104S
1.00
5
DB105S
DB106S
DB107S
μA V
RM
=V
RRM
1/4
S-S010
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
