DZB11C
| Model | DZB11C |
| Description | 1.0W Zener Diodes |
| PDF file | Total 2 pages (File size: 42K) |
| Chip Manufacturer | SANYO |
Ordering number :EN653F
Features
· Plastic molded structure.
· Voltage regulator use.
· Power dissipation:P=1.0W.
· Zener voltage:VZ=6.2 to 30V
Package Dimensions
unit:mm
1083
[DZB6.2 to DZB30]
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Conditions
Ratings
1.0
150
–40 to +150
Unit
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Type No.
Zener Characteristics
Zener Voltage
VZ
[V]
typ
DZB6.2U
6.8C
7.5C
8.2C
9.1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
min
5.60
6.45
7.13
7.79
8.65
9.50
10.50
11.40
12.40
14.30
15.20
17.10
19.00
20.90
22.80
25.70
28.50
max
6.80
7.14
7.81
8.61
9.55
10.50
11.50
12.60
13.60
15.80
16.80
18.90
21.00
23.10
25.20
28.30
31.50
Dynamic
Resistance
[Ω]
max
60
60
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Measured
Current
IZ
[mA]
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
VF
[V]
max
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Forward Voltage Drop
Measured
Current
[A]
IR
[µA]
max
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–2.0
–3.0
–4.5
–4.9
–5.5
–6.0
–7.0
–8.0
–9.0
–10.0
–11.0
–13.0
–14.0
–16.0
–17.0
–19.0
–21.0
Reverse Current
Measured
Voltage
[V]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2
