EI8LC12CX
| Model | EI8LC12CX |
| Description | Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
| PDF file | Total 2 pages (File size: 150K) |
| Chip Manufacturer | IMP |
Ei8LC05 thru Ei8LC15
Low Capacitance, Bidirectional, Monolithic
TVS Diode Network
FEATURES
·
500 watts Peak Pulse Power (tp = 8 x 20 µs)
·
ESD and Transient protection for data, signal
and Vcc bus to IEC 1000-4-2
(formerly IEC 801-2)
·
Protects up to 4 bi-directional lines
·
Standoff voltages from 5 to 15 V
·
Low capacitance for high speed interfaces
·
Low clamping voltage
·
ESD protection >8kV
DESCRIPTION
The Ei8LC series of monolithic transient voltage
suppressors are designed for applications where
voltage transients, caused by electrostatic
discharge (ESD) and other induced voltage
surges, can permanently damage voltage
sensitive components. These TVS diodes are
characterized by their high surge capability,
extremely fast response time and low on-
resistance.
The Ei8LC series consists of bi-directional diode
arrays with low input capacitances and is
specifically designed to protect multiple or single
data lines with each channel being electrically
independent for multiple I/O port protection.
These monolithic diode array networks can be
used to protect combinations of 8 unidirectional
or bi-directional lines. They provide ESD and
surge protection for sensitive power and I/O
ports. The 8LC series TVS diode array will meet
the surge and ESD per IEC 1000-4-2.
Applications
·
ESD & surge protection for power lines & I/O
ports
·
TTL and MOS Bus Lines
·
RS-232, Rs-422 and RS-485 data lines
·
High speed logic
·
High speed data & video transmission
MECHANICAL CHARACTERISTICS
·
Available in 8 lead SOIC and PDIP
·
Solder temperature : 265°C for 10 seconds
Schematic
1
2
3
4
8
7
6
5
Part Numbers May Be Marked With "IMP" or "Ei."
MAXIMUM RATINGS
RATING
Peak Pulse Power (tp = 8 x 20 µs)
Operating Temperature
Storage Temperature
SYMBOL
Ppk
Tj
Tstg
VALUE
UNIT
300
-55 to +150
-55 to +150
Watts
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
Reverse
Min
Max
Stand-off
Vbr
Clamping
Voltage
@ 1mA Voltage
@Ipp=1A
V
RWM
BV(min)
Vc
Volts
Volts
Volts
Ei8LC05CX
5
6
9.8
Ei8LC08CX
8
8.5
13.4
Ei8LC12CX
12
13.3
19.0
Ei8LC15CX
15
16.7
25.5
X= S for SOIC package, X= P for P-Dip Packag
Max
Clamping
Voltage
@Ipp = 10A
Vc
Volts
12.5
16.6
23.5
29.5
Leakage
Current
@ V
RWM
I
R
µA
400
10
2
2
Max.
Cap.
@0V, 1Mhz
Cj
pf
15
15
15
15
Note : Clamping voltage values are based upon an industry standard 8 x 20µs peak pulse current (Ipp) waveform.
