F25L004A-100P
| Model | F25L004A-100P |
| Description | Flash, 512KX8, PDSO8, |
| PDF file | Total 32 pages (File size: 559K) |
| Chip Manufacturer | ESMT |
ESMT
4Mbit (512Kx8)
F25L004A
3V Only Serial Flash Memory
FEATURES
Single supply voltage 2.7~3.6V
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
Low power consumption
- typical active current
- 15
µ
A typical standby current
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte program time 9
µ
s(typical)
Erase
- Chip erase time 4s(typical)
- Sector erase time 60ms(typical),
block erase time 1sec (typical)
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
Package available
- 8-pin SOIC 150-mil
- 8-pin SOIC 200-mil
ORDERING INFORMATION
Part No.
F25L004A –50P
F25L004A –100P
F25L004A –50PA
Speed
50MHz
100MHz
50MHz
Package
8 lead
SOIC
8 lead
SOIC
8 lead
SOIC
150 mil
150 mil
200 mil
COMMENTS
Pb-free
Pb-free
Pb-free
Part No.
Speed
Package
8 lead
SOIC
8 lead
PDIP
8 lead
PDIP
200 mil
300 mil
300 mil
COMMENTS
Pb-free
Pb-free
Pb-free
F25L004A –100PA 100MHz
F25L004A –50P
F25L004A –100D
50MHz
100MHz
GENERAL DESCRIPTION
The F25L004A is a 4Megablt, 3V only CMOS Serial Flash
memory device organized as 512K bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L004A features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2006
Revision:
1.0
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