F4294-09
| Model | F4294-09 |
| Description | MCP ASSEMBLY WITH CENTER HOLE FOR REFLECTRON MS |
| PDF file | Total 2 pages (File size: 72K) |
| Chip Manufacturer | HAMAMATSU |
PRELIMINARY DATA
MAY 1998
MCP ASSEMBLY
WITH CENTER HOLE
FOR REFLECTRON MS
F4294-09
Ideally suited for reflectron mass spectrometer
The F4294-09 is an MCP assembly developed for reflectron mass
spectrometers. In spite of having a center hole for beam line, the
F4294-09 eliminates ringing phenomena which have been a
problem with conventional MCP assemblies with a center hole.
The F4294-09 thus makes high-speed ion detection possible.
This allows a significant size reduction in the TOF mass spec-
trometer and a dramatic improvement in mass resolution.
TMCPF0090
FEATURES
Center hole for beam line
High-speed response
Good output waveform with negligible ringing
APPLICATION
Reflectron mass spectrometer
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Diameter
Effective Diameter
Maximum Height
MCP Channel Diameter
Number of MCP Stages
Center Hole Diameter
Center Dead Space Diameter
Value
69.0
27.0
26.4
12
2
6.0
12.0
Unit
mm
mm
mm
µm
-
mm
mm
Figure 1: Typical Output Waveform
TMCPB0077EA
MAXIMUM RATINGS (Absolute values)
MCP Supply Voltage (In-Out)
MCP-Out to Anode Voltage
Electric Potential at Each
Terminal
Operating Vacuum Condition
Baking Temperature
Baking Time
Baking Vacuum Condition
* Baking cannot be performed.
2
0.5
MCP-In: -2.5
MCP-Out: -0.5
Anode: GND
-4
-6
6.7×10 (5×10 ) Max.
-*
-*
-*
-4
-6
kV
kV
kV
Pa (Torr)
°C
h
Pa (Torr)
OUTPUT VOLTAGE (5mV/div)
RISE TIME: 328ps
FALL TIME: 633ps
FWHM
: 592ps
SUPPLY VOLTAGE (MCP): 1700V
CHARACTERISTICS (at 1.3×10 Pa (1×10 Torr), Ta=+25°C)
Gain at 2.0kV
Plate Resistance per MCP
Dark Count at 2.0kV
1×10
10 to 100
5
6
RESPONSE TIME (0.5ns/div)
-
MΩ
2
cps/cm
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject
to change without notice. No patent rights are granted to any of the circuits described herein.
©
1998 Hamamatsu Photonics K.K.
