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FCPF11N60

FCPF11N60

Model FCPF11N60
Description SuperFET
PDF file Total 10 pages (File size: 811K)
Chip Manufacturer FAIRCHILD
FCP11N60/FCPF11N60
SuperFET
FCP11N60/FCPF11N60
General Description
SuperFET
TM
is a new generation of high voltage MOSFETs
from Fairchild with outstanding low on-resistance and low
gate charge performance, a result of proprietary technology
utilizing advanced charge balance mechanisms.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
TM
Features
650V @T
j
= 150°C
Typ. Rds(on)=0.32Ω
Ultra low gate charge (typ. Qg=40nC)
Low effective output capacitance (typ. Coss.eff=95pF)
100% avalanche tested
D
!
G
!
G DS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
!
S
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
T
C
= 25°C unless otherwise noted
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FCP11N60
11
7
33
FCPF11N60
11*
7*
33*
±
30
340
11
12.5
4.5
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
125
1.0
36
0.29
-55 to +150
300
* Drain current limited by maximum junction termperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60
1.0
0.5
62.5
FCPF11N60
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
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