FDS6676AS
| Model | FDS6676AS |
| Description | 30V N-Channel PowerTrench SyncFET |
| PDF file | Total 8 pages (File size: 543K) |
| Chip Manufacturer | FAIRCHILD |
FDS6676AS 30V N-Channel PowerTrench
®
SyncFET™
April 2005
FDS6676AS
30V N-Channel PowerTrench
®
SyncFET™
Features
■
14.5 A, 30 V. R
DS(ON)
max= 6.0 m
Ω
@ V
GS
= 10 V
R
DS(ON)
max= 7.25 m
Ω
@ V
GS
= 4.5 V
■
Includes SyncFET Schottky body diode
■
Low gate charge (45nC typical)
■
High performance trench technology for extremely low
R
DS(ON)
and fast switching
■
High power and current handling capability
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
Applications
■
DC/DC converter
■
Low side notebook
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
θ
JA
R
θ
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
±
20
14.5
50
2.5
1.2
1
–55 to +150
Units
V
V
A
W
°
C
°
C/W
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
FDS6676AS
FDS6676AS
Device
FDS6676AS
FDS6676AS_NL
(Note 3)
Reel Size
13’’
13’’
Tape width
12mm
12mm
Quantity
2500 units
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6676AS Rev. A (X)
