FYPF1010DN
| Model | FYPF1010DN |
| Description | SCHOTTKY BARRIER RECTIFIER |
| PDF file | Total 4 pages (File size: 52K) |
| Chip Manufacturer | FAIRCHILD |
FYPF1010DN
FYPF1010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
1
2
3
TO-220F
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
°
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T
C
= 125°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
100
100
10
100
-40 to +150
Units
V
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
4.0
Units
°C/W
Electrical Characteristics
(per diode)
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 5A
I
F
= 5A
I
F
= 10A
I
F
= 10A
Maximum Instantaneous Reverse Current
@ rated V
R
Value
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
0.75
0.65
0.95
0.73
mA
1
30
Units
V
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
