FZT749
| Model | FZT749 |
| Description | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| PDF file | Total 2 pages (File size: 90K) |
| Chip Manufacturer | ZETEX |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT649
FZT749
FZT749
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-35
-25
-5
-8
-3
2
-55 to +150
UNIT
V
V
V
-0.1
-10
-0.1
-0.12
-0.40
-0.9
-0.8
-0.3
-0.6
-1.25
-1.0
300
MHz
100
pF
ns
µ
A
µ
A
µ
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off
Currents
Saturation Voltages
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
V
BE(on)
h
FE
70
100
75
15
100
-35
-25
-5
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
V
EB
=4V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
V
V
V
V
200
200
150
50
160
55
40
f
T
C
obo
t
on
t
off
450
ns
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
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