FZT792
| Model | FZT792 |
| Description | PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR |
| PDF file | Total 3 pages (File size: 80K) |
| Chip Manufacturer | ZETEX |
SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
FZT692B
FZT792A
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT792A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS
VALUE
-75
-70
-5
-5
-2
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
I
CBO
MIN.
-75
-70
-5
TYP.
-100
-90
-8.5
-0.1
-10
-0.1
-0.30
-0.30
-0.30
-0.80
-0.45
-0.50
-0.50
-0.95
MAX. UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100°C
V
EB
=-4V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-25mA*
I
EBO
Saturation Voltages
V
CE(sat)
V
V
V
V
V
BE(sat)
3 - 250
