FZT796
| Model | FZT796 |
| Description | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| PDF file | Total 2 pages (File size: 81K) |
| Chip Manufacturer | ZETEX |
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V
CEO
* Gain of 250 at I
C
=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT696B
PARTMARKING DETAIL -
FZT796A
FZT796A
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-200
-200
-5
-1
-0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
Breakdown Voltage
Collector-Base
Collector-Emitter
Emitter-Base
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
-200
-200
-5
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
V
V
-0.1
-0.1
-0.2
-0.3
-0.3
-0.95
-0.67
300
300
250
100
100
225
12
100
3200
800
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-150V
V
EB
=-4V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
I
C
=-200mA,I
B
=-20mA*
I
C
=-200mA,V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
V
V
V
V
V
Base-EmitterSaturationVoltage V
BE(sat)
Base-EmitterTurn-OnVoltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
MHz
pF
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
Spice parameter data is available upon request for this device
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