G1127-02
| Model | G1127-02 |
| Description | GaAsP photodiode |
| PDF file | Total 4 pages (File size: 171K) |
| Chip Manufacturer | HAMAMATSU |
GaAsP photodiode
s
Shunt resistance vs. ambient temperature
(Typ. V
R
=10 mV)
10 TΩ
G1126-02, G1127-02, G2119
s
Short circuit current linearity
10
0
10
-2
(Typ. Ta=25 ˚C, A light source fully illuminated)
1 TΩ
R
L
=100
Ω
100 GΩ
G1126-02
G1127-02
OUTPUT CURRENT (A)
SHUNT RESISTANCE
10
-4
10
-6
10
-8
10
10
-10
10 GΩ
1 GΩ
G2119
-12
100 MΩ
10
-14
DEPENDENT ON NEP
10
-16 -16
-14
-12
-10
-8
-6
10
10
10
10
10
10
10 MΩ
-20
0
20
40
60
80
10
-4
10
-2
10
0
AMBIENT TEMPERATURE
(˚C)
KGPDB0038EA
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
s
Dimensional outlines (unit: mm)
➀
G1126-02
9.1 ± 0.2
WINDOW
5.9 ± 0.1
➁
G1127-02
13.9 ± 0.2
4.1 ± 0.2
5.0 ± 0.2
1.9
8.1 ± 0.1
WINDOW
10.5 ± 0.1
12.35 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.9
20
PHOTOSENSITIVE
SURFACE
0.45
LEAD
7.5 ± 0.2
5.08 ± 0.2
MARK ( 1.4)
CONNECTED
TO CASE
CONNECTED
TO CASE
KGPDA0006EA
15
KGPDA0007EA
