G20N60B3
| Model | G20N60B3 |
| Description | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| PDF file | Total 7 pages (File size: 181K) |
| Chip Manufacturer | FAIRCHILD |
HGTG20N60B3D
Data Sheet
December 2001
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Features
• 40A, 600V at T
C
= 25
o
C
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
o
C
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
HGTG20N60B3D
PACKAGE
TO-247
BRAND
G20N60B3D
COLLECTOR
(BOTTOM SIDE METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
