H01N45A
| Model | H01N45A |
| Description | N-Channel Power Field Effect Transistor |
| PDF file | Total 4 pages (File size: 47K) |
| Chip Manufacturer | HSMC |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A
N-Channel Power Field Effect Transistor
H01N45A Pin Assignment
3-Lead Plastic
TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
12
3
Features
•
Typical R
DS(on)
=4.1Ω
•
Extremely High dv/dt Capability
•
100% Avalanche Tested
•
Gate Charge Minimized
•
New High Voltage Benchmark
D
G
S
Symbol:
Applications
•
Switch Mode Low Power Supplies (SMPS)
•
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
•
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
dv/dt
T
j
, T
stg
I
AR
E
AS
Parameter
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20KΩ)
Gate-Source Voltage
Drain Current (Continuous) at T
C
=25
o
C
Drain Current (Continuous) at T
C
=100
o
C
Drain Current (Pulsed)
Total Power Dissipation at T
C
=25
o
C
Derate Factor
Peak Diode recovery Voltage Slope
Operating Junction and Storage Temperature Range
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T
J
Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Value
450
450
±30
0.5
0.315
2
2.5
0.025
3
-65 to 150
1.5
25
Units
V
V
V
A
A
A
W
W/°C
V/ns
°C
A
mJ
Thermal Data
Symbol
R
thj-amb
R
thj-lead
T
L
Parameter
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
Value
120
40
260
Units
o
o
C/W
C/W
o
C
H01N45A
HSMC Product Specification
