H2N4401
| Model | H2N4401 |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| PDF file | Total 4 pages (File size: 43K) |
| Chip Manufacturer | HSMC |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 1/4
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier
applications.
Features
•
Complementary to H2N4403
•
High Power Dissipation : 625 mW at 25°C
•
High DC Current Gain : 100-300 at 150mA
•
High Breakdown Voltage : 40 V Min.
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°C
Junction Temperature................................................................................................ +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage ................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
5
-
-
-
750
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, IE=0, f=1MHz
MHz
pF
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE4
Rank
Range
H2N4401
A
100-210
B
190-300
HSMC Product Specification
