HFA16TA60C
| Model | HFA16TA60C |
| Description | Ultrafast, Soft Recovery Diode |
| PDF file | Total 6 pages (File size: 184K) |
| Chip Manufacturer | IRF |
Bulletin PD-2.342 rev. A 11/00
HFA16TA60C
HEXFRED
Features
•
•
•
•
•
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
TM
Ultrafast, Soft Recovery Diode
2
V
R
= 600V
V
F
(typ.)* = 1.7V
Q
rr
*= 65nC
di
(rec)M
/dt * = 240A/µs
* 125°C
1
3
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA16TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics
which result in performance which is unsurpassed by any rectifier previously
available. With basic ratings of 600 volts and 15 amps per Leg continuous
current, the HFA16TA60C is especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current
(I
RRM
) and does not exhibit any tendency to "snap-off" during the t
b
portion of
recovery. The HEXFRED features combine to offer designers a rectifier with
lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly
reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA16TA60C is ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
TO-220AB
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
600
8.0
60
24
36
14
-55 to +150
Units
V
A
C
W
1
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 HFA16TA60C-003PBF
|
Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon, | VISHAY | Preview |
|
HFA16TA60C-009
|
Rectifier Diode, 1 Phase, 2 Element, 8A, Silicon, TO-220AB, 3 PIN | IRF | Preview |
|
HFA16TA60C-011
|
Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon, | VISHAY | Preview |
|
HFA16TA60C-012
|
Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon | VISHAY | Preview |
|
HFA16TA60C-012PBF
|
Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon, | VISHAY | Preview |
|
HFA16TA60C-029
|
Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon | VISHAY | Preview |
