HIS465
| Model | HIS465 |
| Description | Silicon Controlled Rectifier, TO-218 |
| PDF file | Total 1 pages (File size: 42K) |
| Chip Manufacturer | HUTSON |
MAXIMUM RATINGS
Repetitive Peak Off-State Voltage (1)
Gate open, and Tj = 110° C
RMS On-State Current at TC = 80 ° C
and Conduction Angle of 360°
Peak Surge (Non-Repetitive) On-State
Current, One-Cycle, at 50Hz or 60 Hz
Peak Gate-Trigger Current for 3µsec. Max.
Peak Gate-Power Dissipation at IGT < IGTM
Average Gate-Power Dissipation
Storage Temperature Range
Operating Temperature Range, Tj
SYMBOL VDRM
50
100
200
400
600
DEVICE NUMBERS
HIS025
HIS125
HIS225
HIS425
HIS625
25
250
5
20
0.5
HIS040
HIS140
HIS240
HIS440
HIS640
40
400
5
20
0.5
-40 to +150
-40 to +110
HIS065
HIS165
HIS265
HIS465
HIS665
65
650
5
20
0.5
UNITS
VDRM
VOLT
It(RMS)
ITSM
IGTM
PGM
PG(AV)
Tstg
Toper
AMP
AMP
AMP
WATT
WATT
°C
°C
ELECTRICAL CHARACTERISTICS
At Specified Case Temperatures
Peak Off-State Current, Gate Open
TC = 110° C VDRM &VRRM = Max. Rating
Maximum On-State Voltage, (PEAK) at
TC=25°C, and IT = Rated Amps
DC Holding Current, Gate Open
and TC = 25°C
Critical Rate-Of-Rise of Off-State Voltage,
Gate Open, TC = 110°C
DC Gate – Trigger Current for Anode Voltage
= 12VDC, RL = 60
Ω
and at TC = 25° C
DC Gate-Trigger Voltage for Anode Voltage =
12VDC, RL = 60
Ω
and at TC = 25°C
Gate-Controlled Turn-on Time for
t D + t R, IGT = 150mA and TC = 25°C
Thermal Resistance, Junction-to-Case
IDRM
VTM
IHO
Critical
dv/dt
IGT
VGT
Tgt
R
θ
J-C
0.5
1.6
100
200
40
2
2.5
1.1
0.5
1.8
100
200
40
2
2.5
0.95
0.5
1.8
100
200
50
2
2.5
1.0
mA
MAX.
VOLT
MAX
mA
MAX.
V/µsec.
mA
MAX.
VOLT
MAX
µsec.
°C/WATT
TYP
*All Hutson Isolated TO-218 devices are UL Recognized.
UL number E95589 (N)
Note: Add “E” Suffix for Eyelet Leads
SOLID STATE CONTROL DEVICES
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