HSD16M64B8A-F13
| Model | HSD16M64B8A-F13 |
| Description | DRAM |
| PDF file | Total 10 pages (File size: 102K) |
| Chip Manufacturer | HANBIT |
HANBit
HSD16M64B8A
Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM,
4Banks, 4K Ref., 3.3V
Part No. HSD16M64B8A
GENERAL DESCRIPTION
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
•
Part Identification
HSD16M64B8A-F/10L : 100MHz (CL=3)
HSD16M64B8A-F/10 : 100MHz (CL=2)
HSD16M64B8A-F/12 : 125MHz (CL=3)
HSD16M64B8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
•
Burst mode operation
•
Auto & self refresh capability (4096 Cycles/64ms)
•
LVTTL compatible inputs and outputs
•
Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 4M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV 1.0 (August.2002)
HANBit Electronics Co.,Ltd.
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