HSD8M64B8A-10H
| Model | HSD8M64B8A-10H |
| Description | DRAM |
| PDF file | Total 11 pages (File size: 87K) |
| Chip Manufacturer | HANBIT |
HANBit
HSD8M64B8A
Synchronous DRAM Module 64Mbyte (8Mx64-Bit), 144pin SO-DIMM, 4Banks,
4K Ref., 3.3V
Part No. HSD8M64B8A
GENERAL DESCRIPTION
The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64B8
is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector
sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a
variety of high bandwidth, high performance memory system applications All module components may be powered from a
single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
•
Part Identification
HSD8M64B8A-F/10H : 100MHz (CL=2&3)
HSD8M64B8A-F/10L : 100MHz (CL=3)
HSD8M64B8A-F/10 : 100MHz (CL=2)
HSD8M64B8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
•
Burst mode operation
•
Auto & self refresh capability (4096 Cycles/64ms)
•
LVTTL compatible inputs and outputs
•
Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 2M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002)
1
HANBit Electronics Co.,Ltd.
