IF142
| Model | IF142 |
| Description | N-Channel Silicon Junction Field-Effect Transistor |
| PDF file | Total 1 pages (File size: 66K) |
| Chip Manufacturer | INTERFET |
01/99
B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
IF142
Min
Max
Unit
Process NJ14AL
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V
(BR)GSS
I
GSS
V
GS(OFF)
V
GS
V
GS(F)
I
DSS
– 25
– 0.1
– 0.2
–6
–5
1
15
V
nA
nA
V
V
V
mA
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, I
D
= 5 nA
V
DS
= 15V, I
D
= 50 µA
V
DS
= Ø, I
G
= 1 mA
V
DS
= 15V, V
GS
= ØV
T
A
= 150°C
5
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Y
fs
Y
os
C
iss
C
rss
3.5
0.05
3
0.6
Typ
mS
µS
pF
pF
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
e
N
¯
4
nV/√Hz
V
DS
= 12V, V
GS
= ØV
f = 10 Hz
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
