IXTK120P20T
| Model | IXTK120P20T |
| Description | Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 |
| PDF file | Total 6 pages (File size: 229K) |
| Chip Manufacturer | IXYS |
TrenchP
TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTK120P20T
IXTX120P20T
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
- 200V
- 120A
30mΩ
Ω
300ns
TO-264 (IXTK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
- 200
- 200
±15
±25
-120
- 400
-100
3
10
1040
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
D
S
Tab
PLUS247 (IXTX)
G
D
S
Tab
D = Drain
Tab = Drain
G = Gate
S = Source
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Recitifier
Low R
DS(ON)
and Q
G
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±15V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
- 200
- 2.5
- 4.5
V
V
±200
nA
- 25
μA
- 300
μA
30 mΩ
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
DS100401B(5/13)
