IXTK180N15
| Model | IXTK180N15 |
| Description | High Current MegaMOSTMFET |
| PDF file | Total 2 pages (File size: 88K) |
| Chip Manufacturer | IXYS |
Advance Technical Information
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTK 180N15
V
DSS
I
D25
R
DS(on)
= 150 V
= 180 A
Ω
= 10 mΩ
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 MΩ
Continuous
Transient
T
C
= 25°C MOSFET chip capability
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum ratings
150
150
±20
±30
180
75
720
90
64
3.0
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°
C
°
C
°
C
°
C
Nm/lb.in.
g
G
D
S
TO-264 AA (IXTK)
D (TAB)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
300
0.7/6
10
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
International standard package
•
Fast switching times
Applications
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ±20 V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
150
2.0
4.0
±200
V
V
nA
•
•
•
Motor controls
DC choppers
Switched-mode power supplies
Advantages
•
•
•
50
µA
3 mA
10 mΩ
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
© 2002 IXYS All rights reserved
98878A (02/02)
