IXTM6N80A
| Model | IXTM6N80A |
| Description | N-Channel Enhancement Mode |
| PDF file | Total 4 pages (File size: 91K) |
| Chip Manufacturer | IXYS |
Standard
Power MOSFET
N-Channel Enhancement Mode
V
DSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
I
D25
6A
6A
R
DS(on)
1.8
Ω
1.4
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
6
24
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Features
q
q
q
q
q
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2
4.5
±100
T
J
= 25°C
T
J
= 125°C
250
1
1.8
1.4
V
V
nA
µA
mA
Ω
Ω
Applications
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
q
q
q
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
q
6N80
6N80A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
q
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
91542E(5/96)
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
