IXTP3N110
| Model | IXTP3N110 |
| Description | High Voltage Power MOSFETs |
| PDF file | Total 4 pages (File size: 104K) |
| Chip Manufacturer | IXYS |
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
V
DSS
I
D25
3A
3A
R
DS(on)
4.5
Ω
4.0
Ω
IXTA/IXTP 3N120
IXTA/IXTP 3N110
1200 V
1100 V
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
3N120
3N110
3N120
3N110
Maximum Ratings
1200
1100
1200
1100
±20
±30
3
12
3
20
700
5
150
-55 to +150
150
-55 to +150
V
V
V
V
D (TAB)
TO-220 (IXTP)
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Features
l
l
l
G
DS
TO-263 (IXTA)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
300
1.13/10 Nm/lb.in.
4
2
g
g
l
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
3N120
3N110
1200
1100
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
3N120
3N110
25
1
4.5
4.0
V
V
V
nA
µA
mA
Ω
Ω
Advantages
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
Easy to mount
Space savings
High power density
© 2001 IXYS All rights reserved
98844A (11/01)
