IXTQ180N055T
| Model | IXTQ180N055T |
| Description | Trench Gate Power MOSFET |
| PDF file | Total 5 pages (File size: 117K) |
| Chip Manufacturer | IXYS |
Advance Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T
IXTA 180N055T
IXTP 180N055T
V
DSS
I
D25
R
DS(on)
= 55 V
= 180 A
Ω
= 4.0 mΩ
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Maximum Ratings
55
55
±20
V
V
V
TO-220 (IXTP)
A
A
A
A
G
(TAB)
G
D
S
(TAB)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 10
Ω
T
C
= 25°C
180
75
600
75
1.0
3
360
-55 ... +175
175
-55 ... +150
J
V/ns
W
°C
°C
°C
°C
°C
G = Gate
S = Source
D S
TO-263 (IXTA)
G
S
(TAB)
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
300
260
M
d
Weight
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
55
2.0
4.0
±200
1
250
3.3
4.0
V
V
nA
µA
µA
m
Ω
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 50 A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2005 IXYS All rights reserved
DS99342(02/05)
