IXTT10P50
| Model | IXTT10P50 |
| Description | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
| PDF file | Total 2 pages (File size: 125K) |
| Chip Manufacturer | IXYS |
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
V
DSS
I
D25
R
DS(on)
IXTH/IXTT 10P50
IXTH/IXTT 11P50
-500 V -10 A 0.90
Ω
-500 V -11 A 0.75
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
J
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
-500
-500
±20
±30
10P50
11P50
10P50
11P50
10P50
11P50
-10
-11
-40
-44
-10
-11
30
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
W
°
C
°
C
°C
°C
TO-247 AD (IXTH)
D
(TAB)
TO-268 (IXTT) Case Style
G
S
G = Gate
S = Source
D
(TAB)
D = Drain
TAB = Drain
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
(TO-247)
300
1.13/10 Nm/lb.in.
6
4
g
g
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
-500
0.054
-3.0
-0.122
±100
T
J
= 25°C
T
J
= 125°C
-200
-1
-5.0
V
%/K
V
%/K
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= -250
µA
BV
DSS
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
µA
V
GS(th)
Temperature Coefficient
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= -10 V, I
D
= 0.5 • I
D25
10P50
11P50
R
DS(on)
Temperature Coefficient
0.90
Ω
0.75
Ω
0.6 %/K
94535F (7/02)
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