IXTY08N100P-TRL
| Model | IXTY08N100P-TRL |
| Description | Power Field-Effect Transistor, |
| PDF file | Total 6 pages (File size: 258K) |
| Chip Manufacturer | LITTELFUSE |
Polar
TM
Power MOSFET
IXTY08N100P
IXTA08N100P
IXTP08N100P
V
DSS
I
D25
R
DS(on)
= 1000V
= 0.8A
�?
20�?
�?
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M�?
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
�?
I
DM
, V
DD
�?
V
DSS
, T
J
�?
150°C
T
C
= 25C
Maximum Ratings
1000
1000
�?20
�?30
0.8
1.5
0.8
80
10
42
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
GD
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
300
260
Features
�?
�?
�?
�?
�?
10..65 / 2.2..14.6
1.13 / 10
0.35
2.50
3.00
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
�?
�?
�?
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 50μA
V
GS
=
�?20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
2.0
4.0
V
V
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
�?
AC and DC Motor Drives
�?
�?
Lasers Driverserators
�??
�?
Robotics and Servo Controls
�?
�?
�?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?��?�50
nA
3
A
100
A
17
20
�?
V
GS
= 10V, I
D
= 0.5
�?
I
D25
, Note 1
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DS99865D(8/17)
