J109L-E3
| Model | J109L-E3 |
| Description | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA, PLASTIC, TO-92, 3 PIN, FET General Purpose Small Signal |
| PDF file | Total 5 pages (File size: 44K) |
| Chip Manufacturer | VISHAY |
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
100
V
DS
= 0 V
f = 1 MHz
80
Capacitance (pF)
100
V
GS(off)
= –4 V
g
fs
– Forward Transconductance (mS)
Transconductance vs. Drain Current
60
T
A
= –55_C
10
25_C
125_C
40
C
iss
20
C
rss
V
DS
= 5 V
f = 1 kHz
1
0
0
–4
–8
–12
–16
–20
1
10
I
D
– Drain Current (mA)
100
V
GS
– Gate-Source Voltage (V)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
g
fs
and g
os
@ V
DS
= 5 V
V
GS
= 0 V, f = 1 kHz
160
40
50
100
Noise Voltage vs. Frequency
V
DS
= 5 V
g
os
– Output Conductance (µS)
g
fs
– Forward Transconductance (mS)
120
g
fs
30
en – Noise Voltage nV /
Hz
10
I
D
= 10 mA
80
g
os
20
40
10
40 mA
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
Gate Leakage Current
100 nA
T
A
= 125_C
10 nA
– Gate Leakage
100
Common Gate Input Admittance
g
ig
5 mA
I
D
=10 mA
10
1 nA
1 mA
I
GSS
@ 125_C
100 pA
T
A
= 25_C
10 pA
10 mA
1 mA
I
GSS
@ 25_C
1 pA
0
4
8
12
16
20
0.1
10
20
50
100
V
DG
– Drain-Gate Voltage (V)
f – Frequency (MHz)
5 mA
(mS)
1
I
G
b
ig
T
A
= 25_C
V
DG
= 20 V
I
D
= 20 mA
www.vishay.com
7-4
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
