J110A-TO-92
| Model | J110A-TO-92 |
| Description | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN |
| PDF file | Total 2 pages (File size: 301K) |
| Chip Manufacturer | LINER |
J/SST108 SERIES
LOW NOISE SINGLE
Linear Integrated Systems
FEATURES
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Source
-25V
50mA
350mW
-55 to 150°C
-55 to 150°C
1
N-CHANNEL JFET SWITCH
r
DS(on)
≤
8Ω
t
ON
≤
4ns
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
1
3
D S G
1 2 3
G
S
2
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source
On Resistance
108, 109, 110
110A
2
TYP
J/SST108
MIN
-25
-3
-10
MAX
J/SST109
MIN
-25
-2
40
-6
MAX
J/SST110
MIN
-25
-0.5
10
-4
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
mA
V
DS
= 5V, I
D
= 1µA
I
G
= 1mA, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 10V, I
D
= 10mA
V
DS
= 5V, V
GS
= -10V
0.7
80
-0.01
-0.01
0.02
3
8
3
12
3
18
25
Ω
-3
-3
-3
nA
V
GS
= 0V, V
DS
≤
0.1V
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
Reverse Transfer
Capacitance
SST
J
SST
J
60
60
11
11
3.5
15
15
15
nV/√Hz
TYP
17
0.6
J/SST108
MIN
MAX
J/SST109
MIN
MAX
J/SST110
MIN
MAX
UNIT
mS
CONDITIONS
V
DS
= 5V, I
D
= 10mA
f
= 1kHz
V
GS
= 0V, I
D
= 0A
f
= 1kHz
V
DS
= 0V, V
GS
= 0V
f
= 1MHz
V
DS
= 0V, V
GS
= -10V
f
= 1MHz
V
DS
= 5V, I
D
= 10mA
f
= 1kHz
8
12
18
Ω
85
85
85
pF
Equivalent Input Noise Voltage
Linear Integrated Systems
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