J112-E3
| Model | J112-E3 |
| Description | Transistor |
| PDF file | Total 6 pages (File size: 72K) |
| Chip Manufacturer | VISHAY |
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111
J/SST112
J/SST113
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
=
5
V, I
D
= 1
mA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 15 V, I
D
= 10 mA
V
DS
= 5 V, V
GS
= –10 V
T
A
= 125_C
V
GS
= 0 V, V
DS
= 0.1 V
I
G
= 1 mA , V
DS
= 0 V
–55
–35
–3
20
–10
–35
–1
5
–1
–1
–5
–35
V
–3
2
–1
nA
pA
mA
–0.005
–3
–5
0.005
3
1
1
1
nA
30
0.7
50
100
W
V
Dynamic
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= 20 V, I
D
= 1 mA
f = 1 kHz
6
25
30
7
3
3
12
5
50
12
5
100
12
pF
5
nV⁄
√Hz
mS
mS
W
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
V
DS
= 0 V, V
GS
=
-10
V
f = 1 MHz
V
DG
= 10 V, I
D
= 1 mA
f = 1 kHz
Switching
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
V
DD
= 10 V, V
GS(H)
= 0 V
See Switching Circuit
2
2
ns
6
15
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
NCB
www.vishay.com
7-2
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
