J232
| Model | J232 |
| Description | N-Channel Silicon Junction Field-Effect Transistor |
| PDF file | Total 1 pages (File size: 96K) |
| Chip Manufacturer | INTERFET |
01/99
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifier
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
J232
Min
V
(BR)GSS
I
GSS
I
G
V
GS(OFF)
I
DSS
–3
5
–2
–6
10
– 40
– 250
Typ
Max
Unit
V
pA
pA
V
mA
Process NJ16
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 20V, I
D
= ØV
V
DS
= 20V, I
D
= 1 µA
V
DS
= 20V, V
GS
= Ø V
2500
5
4
1
20
6
5000
µS
µS
pF
pF
V
DS
= 20V, V
GS
= Ø V
V
DS
= 20V, V
GS
= Ø V
V
DS
= 20V, V
GS
= Ø V
V
DS
= 20V, V
GS
= Ø V
V
DS
= 10V, V
GS
= Ø V
V
DS
= 10V, V
GS
= Ø V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 1 kHz
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Equivalent Short Circuit
Input Noise Voltage
g
os
C
iss
C
rss
e
N
¯
30
nV/√Hz
nV/√Hz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ232
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
