J305-TR6
| Model | J305-TR6 |
| Description | Transistor |
| PDF file | Total 7 pages (File size: 96K) |
| Chip Manufacturer | VISHAY |
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
g
fs
−
Forward Transconductance (mS)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
50
I
DSS
−
Saturation Drain Current (mA)
16
I
DSS
8
400
r
DS
@
I
D
= 300
mA,
V
GS
= 0 V
g
os
@
V
DS
= 10 V,
V
GS
= 0 V
f = 1 kHz
g os
−
Output Conductance (
µ
S)
40
12
g
fs
6
300
r
DS
g
os
30
8
4
200
20
4
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
2
100
10
0
0
−2
−4
−6
−8
−10
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
0
0
−2
−4
−6
−8
−10
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
100 nA
10 nA
I
G
−
Gate Leakage (A)
Gate Leakage Current
5 mA
g
fs
−
Forward Transconductance (mS)
1 mA
T
A
= 125_C
0.1 mA
10
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
8
T
A
=
−55_C
1 nA
100 pA
6
25_C
5 mA
10 pA
1 pA
0.1 pA
0
4
8
12
T
A
= 25_C
1 mA
0.1 mA
I
GSS
@
125_C
4
125_C
2
I
GSS
@ 25_C
0
16
20
0.1
1
I
D
−
Drain Current (mA)
10
V
DG
−
Drain-Gate Voltage (V)
Output Characteristics
10
V
GS(off)
=
−2
V
8
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
V
GS
= 0 V
6
−0.2
V
−0.4
V
4
−0.6
V
−0.8
V
2
−1.0
V
−1.2
V
−1.4
V
0
2
4
6
8
10
12
15
Output Characteristics
V
GS(off)
=
−3
V
V
GS
= 0 V
9
−0.3
V
−0.6
V
6
−0.9
V
−1.2
V
3
−1.5
V
−1.8
V
0
0
0
2
4
6
8
10
V
DS
−
Drain-Source Voltage (V)
www.vishay.com
V
DS
−
Drain-Source Voltage (V)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
3
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