J309-TR3
| Model | J309-TR3 |
| Description | Transistor |
| PDF file | Total 8 pages (File size: 115K) |
| Chip Manufacturer | VISHAY |
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
100
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
50
g
fs
−
Forward Transconductance (mS)
Gate Leakage Current
10 nA
I
G
@
I
D
= 10 mA
1 nA
I
G
−
Gate Leakage
T
A
= 125_C
200 mA
I
DSS
−
Saturation Drain Current (mA)
80
40
60
g
fs
40
I
DSS
30
100 pA
I
GSS
@ 125_C
200 mA
20
10 pA
10 mA
1 pA
T
A
= 25_C
I
GSS
@ 25_C
20
10
0
0
−1
−2
−3
−4
−5
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
0.1 pA
0
3
6
9
12
15
V
DG
−
Drain-Gate Voltage (V)
100
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
300
20
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
g
os
−
Output Conductance (mS)
g
fs
−
Forward Transconductance (mS)
80
240
16
T
A
=
−55_C
12
60
r
DS
g
os
180
40
120
8
25_C
125_C
20
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
0
0
−1
−2
−3
−4
−5
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
60
4
0
0
0.1
1
I
D
−
Drain Current (mA)
10
15
Output Characteristics
V
GS(off)
=
−1.5
V
V
GS
= 0 V
30
Output Characteristics
V
GS(off)
=
−3
V
V
GS
= 0 V
12
I
D
−
Drain Current (mA)
−0.2
V
9
−0.4
V
6
−0.6
V
3
−0.8
V
−1.0
V
0
0.2
0.4
0.6
0.8
1
I
D
−
Drain Current (mA)
24
18
−0.4
V
−0.8
V
−1.2
V
−1.6
V
12
6
−2.0
V
−2.4
V
0
0
0
0.2
0.4
0.6
0.8
1
V
DS
−
Drain-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
V
DS
−
Drain-Source Voltage (V)
www.vishay.com
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