• Inventory
  • Products
  • Technical Information
  • Circuit Diagram
  • Data Sheet
Data Sheet
Home > Data Sheet > J309D70Z
J309D70Z

J309D70Z

Model J309D70Z
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
PDF file Total 13 pages (File size: 562K)
Chip Manufacturer FAIRCHILD
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= - 1.0
µA,
V
DS
= 0
V
GS
= - 15 V, V
DS
= 0
V
GS
= - 15 V, V
DS
= 0, T
A
= 125°C
V
DS
= 10 V, I
D
= 1.0 nA
J309
J310
- 25
- 1.0
- 1.0
- 4.0
- 6.5
V
nA
µA
V
V
- 1.0
- 2.0
ON CHARACTERISTICS
I
DSS
V
GS(
f
)
Zero-Gate Voltage Drain Current*
Gate-Source Forward Voltage
V
DS
= 10 V, V
GS
= 0
V
DS
= 0, I
G
= 1.0 mA
J309
J310
12
24
30
60
1.0
mA
mA
V
SMALL SIGNAL CHARACTERISTICS
Re
(
y
is)
Common-Source Input Conductance V
DS
= 10, I
D
= 10 mA, f = 100 MHz
J309
J310
Common-Source Output
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
Conductance
Common-Gate Power Gain
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
Common-Source Forward
Transconductance
Common-Gate Input Conductance
Common-Source Forward
Transconductance
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
J309
J310
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
10,000
8000
0.7
0.5
0.25
16
12
12
mmhos
mmhos
mmhos
dB
mmhos
mmhos
20,000
µmhos
18,000
µmhos
150
µmhos
µmhos
µmhos
µmhos
µmhos
pF
pF
dB
Re
(
y
os)
G
pg
Re
(
y
fs)
Re
(
y
ig)
g
fs
g
os
g
fg
g
og
C
dg
C
sg
NF
e
n
Common-Source Output
Conductance
Common-Gate Forward Conductance V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
J309
J310
Common-Gate Output Conductance V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
J309
J310
Drain-Gate Capacitance
V
DS
= 0, V
GS
= - 10, f = 1.0 MHz
Source-Gate Capacitance
Noise Figure
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 0, V
GS
= - 10, f = 1.0 MHz
V
DS
= 10 V, I
D
= 10 mA,
f = 450 MHz
V
DS
= 10 V, I
D
= 10 mA,
f = 100 Hz
13,000
12,000
100
150
2.0
4.1
3.0
6.0
2.5
5.0
nV/ÖHz
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
Go Upload

* Only PDF files are allowed for upload

* Enter up to 200 characters.