JAN1N1124RA
| Model | JAN1N1124RA |
| Description | Rectifier Diode, 1 Phase, 1 Element, 3.3A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN |
| PDF file | Total 3 pages (File size: 59K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
Qualified per MIL-PRF-19500/260
•
Glass Passivated Die
•
Glass to Metal Seal Construction
•
25 Amps Surge Rating
•
VRRM to 1000 Volts
DEVICES
LEVELS
1N1124A
1N1126A
1N1128A
1N1124RA
1N1126RA
1N1128RA
1N3649
1N3650
1N3649R
1N3650R
JAN
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
Symbol
Value
200
400
600
800
1000
3.3
25
2.0
-65°C to 150°C
-65°C to 200°C
Unit
V
RWM
V
Average Forward Current, T
C
= 150°
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 150°C, T = 1/120s
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
I
F
I
FSM
R
θjc
T
C
T
stg
A
A
°C/W
°C
°C
DO-203AA(DO-4)
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
F
= 10A, T
j
= 25°C*
Reverse Current
V
R
= 200, T
j
= 25°C
V
R
= 400, T
j
= 25°C
V
R
= 600, T
j
= 25°C
V
R
= 800, T
j
= 25°C
V
R
= 1000, T
j
= 25°C
Reverse Current
V
R
= 200, T
j
= 150°C
V
R
= 400, T
j
= 150°C
V
R
= 600, T
j
= 150°C
V
R
= 800, T
j
= 150°C
V
R
= 1000, T
j
= 150°C
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
Symbol
V
F
Min.
Max.
2.2
Unit
V
I
R
5
μA
I
R
200
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0135 Rev. 1 (091678)
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