JAN1N276
| Model | JAN1N276 |
| Description | Germanium Diodes |
| PDF file | Total 1 pages (File size: 68K) |
| Chip Manufacturer | MICROSEMI |
Gold Bonded
1N276
Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
Applications
AM/FM detectors
Ratio detectors
FM discriminators
0.018-0.022"
DO-7 Glass Package
0.458-.558 mm
TV audio detectors
RF input probes
TV video detectors
Features
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
1.0"
25.4 mm
(Min.)
Length
0.230-0.30"
5.85-7.62mm
Dia
0.085-.107 "
2.16-2.71 mm
BKC's Sigma-Bond™ plating for
problem free solderability
Absolute Maximum Ratings
at T
amb
= 25
O
C Unless Otherwise Specified
Parameter
Symbols
Peak Inverse Voltage
PIV
Surge Current,t = 1 Second
Peak Operating Current
Operating and Storage Temperatures
Electrical Characteristics
at T
amb
= 25 C
Parameter
Test Conditions
Forward Voltage Drop
I
F
= 40 mA
Breakdown Voltage
Reverse Leakage
Reverse Leakage
I
R
= 1.0 mA
V
R
= 10 Volts
V
R
= 10 Volts,T
amb
= 75
O
C
O
Min.
**
Max.
70
0.4
270
Units
Volts
Amps
mA
O
I
S
I
FSR
T
J & STG
Symbols
V
F
PIV
I
R
I
R
-60
Min.
Typ.
**
**
**
**
0.8
***
***
+90
Max.
1.0
75
5.0
100
C
Units
Volts
Volts
µA
µA
pF
nSec
Volts
Junction Capacitance
f = 1MHz, V
R
= 0 volt
C
J
Reverse Recovery Time trr (If = 5 mA. Irr (rec.)@0.5 mA,Vr= -40 Volts) trr
ForwardRecovery Voltage If = 50 mA PeakSine wave 100 KHz
Vfr
--
--
300
3.0
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
