JAN2N2219AL
| Model | JAN2N2219AL |
| Description | NPN SWITCHING SILICON TRANSISTOR |
| PDF file | Total 2 pages (File size: 63K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temp. Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
2N2218
2N2219
30
60
5.0
2N2218A; L
2N2219A; L
50
75
6.0
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Unit
C/W
800
0.8
3.0
-55 to +200
Max.
59
TO- 39* (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 4.6 mW/ C above T
A
> +25 C
2) Derate linearly 17.0 mW/
0
C above T
C
> +25
0
C
0
TO-5*
2N2218AL,
2N2219AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
E
= 10 mAdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
Collector-Base Cutoff Current
V
CE
= 30 Vdc
V
CE
= 50 Vdc
2N2218; 2N2219
2N2218A; L; 2N2219A; L
2N2218; 2N2219
2N2218A; L; 2N2219A; L
All Types
2N2218; 2N2219
2N2218A; L; 2N2219A; L
V
(BR)CEO
30
50
10
10
10
10
10
Vdc
I
EBO
µAdc
ηAdc
I
CES
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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