JAN2N2609
| Model | JAN2N2609 |
| Description | P-CHANNEL J-FET |
| PDF file | Total 1 pages (File size: 49K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296
Devices
2N2609
Qualified Level
JAN
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Gate-Source Voltage
Power Dissipation
(1)
T
A
= +25
0
C
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/
0
C for T
A
> +25
0
C.
V
GSS
P
D
T
op
,
T
stg
30
300
-65 to +200
Units
V
mW
0
C
TO-18
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
(T
A
= +25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 30 Vdc
V
DS
= 0, V
GS
= 15 Vdc
Drain Current
V
GS
= 0, V
DS
= 5.0 Vdc
Gate-Source Cutoff Voltage
V
DS
= 5.0 V, I
D
= 1.0
µAdc
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
Small-Signal, Common-Source Short-Circuit Input Capacitance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 MHz
Common-Source Spot Noise Figure
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
B
W
= 16%, R
G
= 1.0 megohms, e
gen
= 1.82 mVdc, R
L
= 220
Ω
V
(BR)GSS
I
GSS
Min.
30
Max.
Units
Vdc
30
22.5
-2.0
0.75
-10.0
6.0
ηAdc
I
DDSS
V
GS(off)
Y
fs2
C
iss
mAdc
Vdc
µmho
pF
2,000
6,250
10
NF
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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