JAN2N2880
| Model | JAN2N2880 |
| Description | PNP POWER SILICON TRANSISTOR |
| PDF file | Total 2 pages (File size: 59K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices
2N2880
2N3749
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 100
0
C
(2)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
Symbol
0
Value
80
110
8.0
0.5
5.0
2.0
30
-65 to +200
Max.
3.33
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
TO-59*
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 11.4 mW/ C for T
A
> 25 C
2) Derate linearly 300 mW/
0
C for T
C
> 100
0
C
*See Appendix A for
Package Outline
0
R
θ
JC
0
Unit
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
CEO
I
CBO
I
CEX
I
EBO
Min.
80
110
8.0
20
0.2
1.0
0.2
Max.
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
µAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10
µAdc
Emitter-Base Breakdown to Voltage
I
E
= 10
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
= -0.5
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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