JAN2N3700
| Model | JAN2N3700 |
| Description | LOW POWER NPN SILICON TRANSISTOR |
| PDF file | Total 2 pages (File size: 65K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices
2N3019
2N3019S
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3057A
2N3700
2N3700S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
0 (2)
@ T
C
= +25 C
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
Operating & Storage Jct Temp Range
1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
80
140
7.0
1.0
Units
Vdc
Vdc
Vdc
Adc
W
TO-39* (TO-205AD)
2N3019, 2N3019S
P
T
0.8
0.4
0.5
0.4
W
5.0
1.8
1.8
1.16
-55 to +175
TO- 18* (TO-206AA)
2N3700
T
J
,
T
stg
0
C
TO-46* (TO-206AB)
2N3057A
2)
Derate linearly 4.6 mW/
0
C for type 2N3019 and 2N3019S; 2.3 mW/
0
C for type 2N3057A;
2.85 mW/
0
C for type 2N3700; 6.6 mW/
0
C for type 2N3700UB for T
A
≥
+25
0
C.
Derate linearly 28.6 mW/
0
C for type 2N3019 and 2N3019S;
10.3 mW/
0
C for types 2N3057A, 2N3700, & 2N3700UB for T
C
≥
+25
0
C.
3 PIN
SURFACE MOUNT
*
2N3700UB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CBO
V
(BR)
EBO
V
(BR)
CEO
Min.
140
7.0
80
Max.
Unit
Vdc
Vdc
Vdc
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
µAdc
Emitter-Base Breakdown Voltage
I
E
= 100
µAdc
Collector-Emitter Breakdown Current
I
C
= 30 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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