JAN2N4858UB
| Model | JAN2N4858UB |
| Description | Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3 |
| PDF file | Total 2 pages (File size: 51K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385
Devices
Qualified
Level
JAN
JANTX
JANTXV
2N4856
2N4857
2N4858
2N4859
2N4860
2N4861
2N4856UB 2N4857UB 2N4858UB 2N4859UB 2N4860UB 2N4861UB
ABSOLUTE MAXIMUM RATINGS (T
C
= +25
0
C unless otherwise noted)
2N4856 2N4859
Parameters / Test Conditions
Symbol 2N4857 2N4860
2N4858 2N4861
Gate-Source Voltage
V
GS
-40
-30
Drain-Source Voltage
V
DS
40
30
Drain-Gate Voltage
V
DG
40
30
Gate Current
I
G
50
Power Dissipation
T
A
= +25
0
C
(1)
P
T
0.36
0 (2)
T
C
= +25 C
1.8
Operating Junction & Storage Temperature Range
T
j
, T
stg
-65 to +200
0
0
(1) Derate linearly 2.06 mW/ C for T
A
> 25 C.
(2) Derate linearly 10.3 mW/
0
C for T
C
> 25
0
C.
Unit
V
V
V
mA
W
W
0
C
TO-18*
(TO-206AA)
Surface Mount
(UB version)
*See appendix A
for package
outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
2N4856, 2N4857, 2N4858
V
(BR)GSS
2N4859, 2N4860, 2N4861
Min.
-40
-30
-4.0
-2.0
-0.8
Max.
Units
Vdc
Gate-Source “Off” State Voltage
V
DS
= 15 Vdc, I
D
= 0.5
ηAdc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V
GS(on)
-10
-6.0
-4.0
-0.25
-0.25
0.25
Vdc
Gate Reverse Current
V
DS
= 0, V
GS
= -20 Vdc
V
DS
= 0, V
GS
= -15 Vdc
Drain Current
V
GS
= -10 Vds, V
DS
= 15 Vdc
I
GSS
I
D(off)
ηA
ηA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
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